Carrier trapping by vacancies in semiconductors studied using positron annihilation spectroscopy

by Akira Uedono (University of Tsukuba)

Monday 3 May 2021, 14:30 → 15:30 Europe/Berlin

Zoom Webinar

Positron annihilation is a useful technique for characterizing vacancy-type defects in solids. Because positrons are attracted or repelled by vacancies through the Coulomb force, the transition of the defect charge state influences the trapping probability of positrons by the defects. Using this phenomenon, we studied the career trapping of vacancies in semiconductors by monogenetic positron beams constructed at FRM II and University of Tsukuba.