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17–19 Sept 2018
Fakultät für Maschinenwesen der Technischen Universität München
Europe/Berlin timezone

How does strain influence the performance in polycrystalline solar cells at the nanoscale?

18 Sept 2018, 16:00
1h 30m
Fakultät für Maschinenwesen der Technischen Universität München

Fakultät für Maschinenwesen der Technischen Universität München

Boltzmannstraße 15 85748 Garching b. München
Poster P6 Nanomaterials and nanostructures Poster session 2

Speaker

M. E. Stuckelberger (Deutsches Elektronen-Synchrotron (Hamburg, Germany))

Description

Polycrystalline solar cells offer numerous advantages over their single crystalline counterparts, including lower cost, higher flexibility, and ease of fabrication. Unfortunately, polycrystalline cells are less efficient at converting sunlight into electrical power. Grain boundaries (GBs) are generally accepted as the cause of this efficiency differential because they act as recombination centers and induce voltage inhomogeneities. While GBs have been explored, the role of strain and its impact on local efficiency remains a potential avenue for improving efficiency in polycrystalline thin films.
For this study, we have utilized the hard X-ray nanoprobe (HXN) at NSLS II to measure simultaneously and operando the performance, elemental distribution, and strain via X-ray beam induced current (XBIC) and voltage (XBIV), X-ray fluorescence, and X-ray diffraction.
We find a positive correlation between the local strain and X-ray beam induced current and voltage in industrially manufactured Cu(In,Ga)Se2 grains in a correlative microscopy approach. In grains with low angle tilt boundaries, the connection between strain and XBIC is unclear, likely due to the confounding influence of low angle GBs. Our correlative microscopy approach opens a new avenue for exploring the impact of strain, defects, and morphology on solar cell performance at the individual grain level and points to strain engineering as a potential direction for improving solar cell efficiency.

Primary author

M. E. Stuckelberger (Deutsches Elektronen-Synchrotron (Hamburg, Germany))

Co-authors

S. O. Hruszkewycz (Argonne National Laboratory (Argonne IL, USA)) M. V. Holt (Argonne National Laboratory (Argonne IL, USA)) M. O. Hill (Northwestern University (Chicago IL, USA)) I. Calvo-Almazan (Argonne National Laboratory (Argonne IL, USA)) S. Maddali (Argonne National Laboratory (Argonne IL, USA)) X. Huang (Brookhaven National Laboratory (Upton NY, USA)) H. Yan (Brookhaven National Laboratory (Upton NY, USA)) Y. S. Chu (Brookhaven National Laboratory (Upton NY, USA)) N. Rodkey (Arizona State University (Tempe AZ, USA)) M. Bertoni (Arizona State University (Tempe AZ, USA)) C. Schroer (Deutsches Elektronen-Synchrotron (Hamburg, Germany)) A. Ulvestad (Argonne National Laboratory (Argonne IL, USA))

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