Speaker
Description
The main aim of this work is to reveal the structure of the layers formed
at the interface between deep eutectic solvents (DES) and silicon sur-
face with and without applied constant electric potential using neutron
reflectometry (NR) and molecular dynamics simulations (MDs). Work
is focused on finding experimental evidence for an ordered layer of DES
over an Si substrate under DC conditions and resolving the destruction
of this layer by a superimposed AC field. Electrochemical experiments
have shown that application of the potential of -1.6V superimposed
with alternating sinusoidal component of 50 mV allows zinc depostion.
Increasing temperature has the same effect and at 100 degrees C elec-
trodeposition is possible even in potentiostatic regime. The results ob-
tained with REFSANS instrument at Heinz Maier-Leibnitz Zentrum
(MLZ) are compared with the reflectivity calculated from molecular
dynamics simulations. Through this work we tend to determine the
relationship between NR measurements of DES/silicon interface and
the corresponding structural information obtained by MD simulations
of the same system.
