Speaker
Merve Kabukcuoglu
(Ms)
Description
Gallium arsenide is one of the most important materials for optoelectronic. During manufacturing, the presence of like dislocations may influence the fabrication yield and the performance of the devices. This study provides a deeper understanding of dislocation generation and development in GaAs wafers with mechanical surface damage exposed to thermally induced stress investigated by X-ray diffraction imaging methods.
Primary author
Merve Kabukcuoglu
(Ms)
Co-authors
Dr
Daniel Hänschke
(KIT)
Dr
Elias Hamann
(KIT)
Mr
Simon Haaga
(KIT)
Mr
Simon Bode
(KIT)
Tilo Baumbach
(Karlsruher Institut für Technologie, Hermann-von-Helmholtzplatz, 1 76344 Eggenstein-Leopoldshafen)
Prof.
Andreas Danilewsky
(Uni Freiburg)
