The pulsed low energy positron beam PLEPS is a user facility for defect-profiling with positron lifetime measurements using a monochromatic pulsed beam of variable implantation energy at the intense positron source NEPOMUC at the MLZ in Garching.
Typical applications of PLEPS comprise the defect identification in thin layers and layered structures of semiconductors and insulators, the investigation of irradiation induced defects in materials for fusion and fission as well as the characterization of open volumes in glasses, polymers, polymer- and membrane layers.
To investigate inhomogeneous defect distribution by positron annihilation lifetime spectroscopy a pulsed and focused positron beam is needed. For this purpose the Scanning Positron Micros-cope (SPM) was built and operated by the Universität der Bundeswehr München. To overcome the limitation of low count-rates obtainable with a laboratory source the SPM is currently transferred to the intense positron source NEPOMUC at the MLZ in Garching.
In this talk we will describe the present setup of PLEPS and its performance, and show some exemplary applications.Also, the setup of the SPM at NEPOMUC will be described. An outlook of future developments of PLEPS and SPM will be given.