Speaker
Description
Efficiently suppressing non-radiative recombination within the hole-blocking layer (HBL) and at the HBL-active layer interface is critical for enhancing solar cell performance. In this study, the TiO$_x$ layer is sputter-deposited onto a SnO$_2$ layer at room temperature as a buried interface modification layer. We investigate the structural evolution of TiO$_x$ during sputter deposition using in situ grazing-incidence small-angle X-ray scattering (GISAXS). The novel HBL, achieved by depositing TiO$_x$ with an appropriate thickness on the SnO$_2$ layer, exhibits favorable characteristics, including suitable transmittance, smoother surface roughness, and reduced surface defects. Consequently, this leads to diminished trap-assisted recombination at the interface between the HBL and the active layer. The incorporation of the TiO$_x$ buried interface modification layer results in perovskite solar cells with enhanced power conversion efficiencies and stability compared to unmodified SnO$_2$ monolayer devices. The large data set of in situ GISAXS data will be used for machine learning applications.
