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8–10 Dec 2020 Online only
Online event
Europe/Berlin timezone

Thin film growth by Molecular Beam Epitaxy for MLZ users

9 Dec 2020, 14:30
3h 30m
Online event

Online event

Speaker

Sabine Pütter (Jülich Centre for Neutron Science JCNS, Outstation at MLZ, Forschungszentrum Jülich GmbH)

Description

Molecular Beam Epitaxy (MBE) is a versatile tool to fabricate high quality and high purity epitaxial thin films. At MLZ, the Jülich Centre for Neutron Science (JCNS) runs an MBE system to provide samples for users who either do not have the expertise to prepare thin film samples for their neutron experiments and/or the equipment.

In other words: If you need thin film samples for your neutron experiments, let's discuss how we can prepare your samples!

The MBE system is equipped with effusion cells, electron guns for electron beam evaporation and a plasma source for use with oxygen or nitrogen. A large variety of deposition materials can be used. Compounds are produced either by codeposition or by shutter modulated growth of individual layers. For in-situ surface structure analysis reflection high and low energy electron diffraction is utilized while Auger electron spectroscopy is applied for in-situ chemical surface analysis.

Thin film samples which are sensitive to ambient conditions are first fabricated in the MBE system and then measured at the neutron reflectometer MARIA of JCNS utilizing a versatile small ultra high vacuum condition chamber.[1]
In our presentation we will present examples for high quality thin films like e.g. FeN, Fe$_4$N, SrCoO$_3$ or Nb/Al$_2$O$_3$( 1-1 0 2) and link them to neutron experiments.

[1] A. Syed Mohd, S. Pütter, S. Mattauch, A. Koutsioubas, H. Schneider, A. Weber, and T. Brückel, Rev. Sci. Instrum., vol. 87, pp. 123909, 2016

Primary author

Sabine Pütter (Jülich Centre for Neutron Science JCNS, Outstation at MLZ, Forschungszentrum Jülich GmbH)

Presentation materials

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